Semiconductor device with secure access key and associated methods and systems

ABSTRACT

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which security measures may be implemented to control access to a fuse array (or other secure features) of the memory devices based on a secure access key. In some cases, a customer may define and store a user-defined access key in the fuse array. In other cases, a manufacturer of the memory device may define a manufacturer-defined access key (e.g., an access key based on fuse identification (FID), a secret access key), where a host device coupled with the memory device may obtain the manufacturer-defined access key according to certain protocols. The memory device may compare an access key included in a command directed to the memory device with either the user-defined access key or the manufacturer-defined access key to determine whether to permit or prohibit execution of the command based on the comparison.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/677,376, filed Nov. 7, 2019; which is incorporated herein byreference in its entirety.

TECHNICAL FIELD

The present disclosure generally relates to semiconductor devices, andmore particularly relates to a semiconductor device with a secure accesskey and associated methods and systems.

BACKGROUND

Memory devices are widely used to store information related to variouselectronic devices such as computers, wireless communication devices,cameras, digital displays, and the like. Memory devices are frequentlyprovided as internal, semiconductor, integrated circuits and/or externalremovable devices in computers or other electronic devices. There aremany different types of memory, including volatile and nonvolatilememory. Volatile memory, including random-access memory (RAM), staticrandom-access memory (SRAM), dynamic random-access memory (DRAM), andsynchronous dynamic random-access memory (SDRAM), among others, requirea source of applied power to maintain its data. Nonvolatile memory, bycontrast, can retain its stored data even when not externally powered.Nonvolatile memory is available in a wide variety of technologies,including flash memory (e.g., NAND and NOR), phase change memory (PCM),ferroelectric random-access memory (FeRAM), resistive random-accessmemory (RRAM), and magnetic random-access memory (MRAM), among others.Improving memory devices, generally, may include increasing memory celldensity, increasing read/write speeds or otherwise reducing operationallatency, increasing reliability, increasing data retention, reducingpower consumption, or reducing manufacturing costs, among other metrics.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram schematically illustrating a memory device inaccordance with an embodiment of the present technology.

FIG. 2 is a block diagram schematically illustrating a secure accessflow for a memory device in accordance with an embodiment of the presenttechnology.

FIG. 3a shows a flow chart illustrating a method of establishing anaccess key and a security mode for a memory device and FIG. 3b shows aschematic configuration illustrating the access key and the securitymode in accordance with embodiments of the present technology.

FIG. 4a shows a flow chart illustrating a method of using an optionalaccess key and a status indicator for a memory device and FIG. 4b showsa schematic configuration illustrating the optional access key and thestatus indicator in accordance with embodiments of the presenttechnology.

FIGS. 5 and 6 are block diagrams schematically illustrating circuitconfigurations of a memory device in accordance with embodiments of thepresent technology.

FIG. 7 is a block diagram schematically illustrating a memory system inaccordance with an embodiment of the present technology.

FIGS. 8 through 11 are flow charts illustrating methods of operating amemory device and a memory system including the memory device inaccordance with embodiments of the present technology.

DETAILED DESCRIPTION

A memory device may support various operational features. Some of theoperational features may be described in a specification of the memorydevice such that an end-user of the memory device may utilize theoperational features described in the specification. In addition, thememory device may be configured to support special operational featuresthat require controlled access, which may be referred to as securefeatures. Such secure features may include design-for-test (DFT)functions (which may also be referred to as design-for-manufacturing(DFM) functions). In some embodiments, the DFT functions includevendor-specific features or functions (e.g., test modes that areaccessible only by the manufacture of the memory device), specialfeatures or functions (e.g., certain test modes, special capabilities)that may be activated for a selected customer or a selected set ofmemory devices, an access to a fuse array (or other nonvolatile memoryelements of the memory device), or the like. Various test modes,features, and/or functions under the DFT functions may be referred to asDFT modes, in some cases. The DFT functions provide flexibility tomodify operational characteristics of the memory device withoutimplementing permanent changes to the memory device design. For example,the DFT functions may enable the memory device to perform certainoperations temporarily under the test mode to evaluate feasibility ofthe operations. In some cases, the DFT functions may program the fusearray such that a special capability can be enabled as a default forcertain customers. In other examples, the DFT (or DFM) functions mayselectively configure the memory device to operate pursuant to customerrequirements—e.g., a customer requiring x4 memory devices while anothercustomer requiring x8 memory devices.

The DFT functions may be abused by an unauthorized or hostile actor topermanently damage the memory device or degrade the memory device inundesirable ways. For example, the memory device may store variousoperational information in the nonvolatile memory elements, which thememory device needs to retain without power. The operational informationstored in the nonvolatile memory elements may include criticalinformation associated with the secure features (e.g., DFT functions,entries to the test modes and/or special capabilities) and/or otherconditions for the memory device to operate, such as trim settings,redundancy implementations, optimal timing/biasing parameters, amongothers. Further, some of the nonvolatile memory elements (e.g., fuses,anti-fuses, blown capacitor devices, transistors with blown gate-oxide)are regarded as one-time programmable memory cells due to theirirreversible programming characteristics. Thus, access to thenonvolatile memory elements (e.g., a fuse array) may permit a hostile orinadvertent actor to permanently alter the critical information (due totheir irreversible programming characteristics), which in turn, resultin harmful consequences to the performance or functionality of thememory device (e.g., by activating a test mode functionality thatdisables the memory device).

Similarly, various test modes of the memory device (e.g., thevendor-specific features or functions, the special features or functionsselectively activated) may benefit from being protected against hostileor inadvertent actors, too. In some cases, securing access to the testmodes prevent users from accessing certain aspects of the memorydevice's internal operations or prohibit unauthorized users fromaccessing special capabilities associated with the test modes (e.g.,when the users did not pay for the special capabilities). Additionally,securing access to the test modes can mitigate risks from modifying somevoltages associated with the test modes, which may permanently damagecertain devices or reduce the lifetime of the devices, if not properlymanaged. As such, access to the test modes needs to be strictlycontrolled. In some embodiments, various circuits and components thatperform the DFT functions may be coupled to a common internal potentialof the memory device, and controlled access to the DFT functions may beimplemented via controlled access to the common internal potential.

Several embodiments of the present technology are directed to providevarious levels of security against unauthorized access to thenonvolatile memory elements of a memory device—e.g., secure access to afuse array (e.g., reading information from the fuse array, allowingchanges to functions, test modes, or timings of the memory devicedefined in the fuse array). Although the present technology is describedwith respect to providing security to the fuse access functions andmodules, the present technology is not limited thereto. For example, thesecurity features described herein may be implemented to providesecurity to other modules or functions of the memory device such thatonly authenticated accesses to such modules or functions may be allowed,namely secure feature accesses for the memory device. The secure featureaccesses may include secure accesses to the DFT functions, such asentries to test modes (e.g., directed to temporary changes to testmodes), special feature modes or commands (e.g., allowing only a limitedcustomer to have access to), mode registers and/or specializedregisters, a nonvolatile memory space that could be either permanent (ifbased on one-time programmable elements) or flexible (if based on NANDmemory cells or PCM cells), among others. In some embodiments, some ofthe special feature modes may be hidden (e.g., not described in aspecification of the memory device) from a customer. Further, the fusearray may be replaced by (or provided in addition to) an array of othertypes of nonvolatile memory elements—e.g., one or more conductive layers(e.g., metal interconnect layers), metal switches, blown capacitordevices, transistors with blown gate-oxide, NAND memory cells, PCMcells, magnetic memory cells.

In some cases, a memory device may be configured to allow a customer(e.g., an authentic end-user who purchases the memory device from themanufacturer of the memory device) to select and store a user-definedaccess key (e.g., a first access key) in a fuse array of the memorydevice. The customer may use a special programming mode of the memorydevice (e.g., a post package repair (PPR) mode), which enables thecustomer or a memory vendor in some cases, to program a portion of thefuse array without directly accessing the fuse module. After thecustomer establishes the user-defined access key, the memory device maycontrol accesses to the fuse array (or the DFT functions or otherfeatures of the DFT functions) based on the user-defined access keystored in the fuse array. The memory device may include a component(e.g., an authentication component) to permit or prohibit such accesses.For example, the memory device may receive an access command directed tothe fuse array where the access command includes another access key(e.g., a second access key). The memory device (or the authenticationcomponent) may retrieve the user-defined access key from the fuse arrayupon receiving the access command to compare the user-defined access keywith the second access key included in the access command. Thereafter,the memory device (or the authentication component) may determinewhether to permit or prohibit execution of the access command at thefuse array based on comparing the user-defined access key with thesecond access key. In this manner, a third party—including themanufacturer of the memory device—who does not present a matching accesskey (e.g., the second access key matching the first access key) may beblocked from accessing the fuse array (e.g., reading information fromthe fuse array, altering information stored in the fuse array).

In some cases, a manufacturer may establish an access key based on aunique identification (or identifier) of a memory device. Suchidentification may be based on manufacturing information of the memorydevice—e.g., a production lot identification, a wafer identificationwithin the production lot, a die location of the memory device within awafer. The manufacturer may store the identification in a fuse array ofthe memory device (hence, the identification may be referred to as afuse identification (FID)) such that the manufacturing informationembedded in the identification is retained without a power supplied tothe memory device. The FID may be stored at one address of the fusearray as a single entity or two or more addresses of the fuse arrayafter having been partitioned into two or more portions. In some cases,the manufacturer may encode the FID before storing the FID—e.g., using ahash function. Further, the manufacturer may determine to use differentsets of addresses to store the FIDs for different product groups towhich the memory device belongs. As such, the memory device may beconfigured to control accesses to the fuse array (or the DFT functionsor other features of the DFT functions) based on an FID-based accesskey. That is, a third party who does not know the predetermined set ofaddresses of the fuse array to read the FID and/or the encoding scheme(to decode the FID even after successfully reading the FID at thepredetermined set of addresses) to obtain the FID may be blocked fromaccessing the fuse array when the memory device is configured to checkwhether an access command includes the accurate FID (e.g., the FID-basedaccess key) to permit or prohibit accesses to the fuse array (or othersecure features).

In some cases, a manufacturer of a memory device may define a secretaccess key (e.g., secret to any party other than the manufacturer,including an authentic end-user) for a fuse array (or the DFT functionsor other features of the DFT functions) of the memory device and storethe secret access key in a set of nonvolatile memory elements (e.g., thefuse array or in one or more conductive layers) of the memory device.Also, the manufacturer may establish a sequence of signals (e.g., apredetermined sequence of two or more commands directed to the memorydevice, a predetermined combination of two or more voltage levels as afunction of time) such that the memory device may release the secretaccess key only upon receiving the sequence of signals. Further, themanufacturer may configure the memory device to transmit the secretaccess key using one or more pins that are designated for otherwise onlyreceiving signals (e.g., address pins designated to receive addressinformation from a host device) when releasing the secret access key.Accordingly, a host device (e.g., the manufacturer, a third party, acustomer) coupled with the memory device is required to have priorknowledge of the sequence of signals to transmit to the memory deviceand which pins to monitor to receive the secret access key from thememory device—e.g., the pins the host device is otherwise configured totransmit signals to the memory device. As such, the host device and thememory device may need to be wired in a specific configuration based onsuch knowledge—e.g., using channels electrically coupling the hostdevice with the memory device to enable successful release and receiptof the secret access key. Without receiving the secret access key fromthe memory device, the host device may be blocked from accessing thefuse array (or other secure features) when the memory device isconfigured to check for the secret access key to permit or prohibitaccesses to the fuse array (or other secure features).

A memory device that supports an embodiment of the present technology isdescribed with reference to FIG. 1. More detailed descriptions of anexample secure access flow are provided with reference to FIG. 2. FIGS.3 and 4 illustrate establishing access keys within the memory device inaccordance with embodiments of the present technology. FIGS. 5 and 6illustrate aspects of circuit configurations that implement the secureaccess keys in the memory device in accordance with embodiments of thepresent technology. A memory system that supports embodiments of thepresent technology is described with reference to FIG. 7. Flowchartsillustrating various methods of operating the memory device and memorysystem are described with reference to FIGS. 8 through 11.

FIG. 1 is a block diagram schematically illustrating a memory device 100in accordance with an embodiment of the present technology. The memorydevice 100 may include an array of memory cells, such as memory array150. The memory array 150 may include a plurality of banks (e.g., banks0-15 in the example of FIG. 1), and each bank may include a plurality ofword lines (WL), a plurality of bit lines (BL), and a plurality ofmemory cells (e.g., m×n memory cells) arranged at intersections of theword lines (e.g., m word lines, which may also be referred to as rows)and the bit lines (e.g., n bit lines, which may also be referred to ascolumns). Memory cells can include any one of a number of differentmemory media types, including capacitive, phase change,magnetoresistive, ferroelectric, or the like. The selection of a wordline WL may be performed by a row decoder 140, and the selection of abit line BL may be performed by a column decoder 145. Sense amplifiers(SAMP) may be provided for corresponding bit lines BL and connected toat least one respective local I/O line pair (LIOT/B), which may in turnbe coupled to at least respective one main I/O line pair (MIOT/B), viatransfer gates (TG), which can function as switches. The memory array150 may also include plate lines and corresponding circuitry formanaging their operation.

The memory device 100 may employ a plurality of external terminals thatinclude command and address terminals coupled to a command bus and anaddress bus to receive command signals CMD and address signals ADDR,respectively. The memory device may further include a chip selectterminal to receive a chip select signal CS, clock terminals to receiveclock signals CK and CKF, data clock terminals to receive data clocksignals WCK and WCKF, data terminals DQ, RDQS, DBI, and DMI, powersupply terminals VDD, VSS, VDDQ, and VSSQ.

The command terminals and address terminals may be supplied with anaddress signal and a bank address signal from outside. The addresssignal and the bank address signal supplied to the address terminals canbe transferred, via a command/address input circuit 105, to an addressdecoder 110. The address decoder 110 can receive the address signals andsupply a decoded row address signal (XADD) to the row decoder 140 (whichmay be referred to as a row driver), and a decoded column address signal(YADD) to the column decoder 145 (which may be referred to as a columndriver). The address decoder 110 can also receive the bank addresssignal (BADD) and supply the bank address signal to both the row decoder140 and the column decoder 145. In some embodiments, the command/addressinput circuit 105 may be coupled with a test mode (TM) control circuit175 and relay commands associated with various test mode functionsthereto. In some cases, the test mode functions may be referred to as orinclude aspects of design-for-test (DFT) functions, such as trim settingfunctions (e.g., latching trim conditions without programing fuses),read/write timing functions, fuse access functions, built-in-self-test(BIST) functions, connectivity test functions, etc.

The TM control circuit 175 may perform various test mode functions thatare defined by a manufacturer of the memory device 100. Such test modefunctions may be used only by the manufacturer, not by a customer (e.g.,an entity purchasing the memory device to build an apparatus includingthe memory device). For example, the manufacturer may perform aconnectivity test that is designed to speed up testing of electricalcontinuity of pin interconnections between the memory device 100 and ahost device (e.g., a memory controller). The TM control circuit 175 maybe coupled to one or more registers 118 (which may be referred to asmode registers) in a command decoder 115. In some cases, the TM controlcircuit 175 may read the registers 118 to determine a specific test modefunction to perform based on information stored in the registers 118. Inother cases, the TM control circuit 175 may store information in theregisters 118 such that other functional blocks in the memory device 100may perform appropriate functions based on the information (e.g.,information related to various test modes or DFT functions) stored inthe registers 118.

The TM control circuit 175 may be coupled with a fuse array 180. Thefuse array 180 includes an array of fuses that may be considered asone-time programmable nonvolatile memory elements. In some embodiments,the fuse array 180 may be replaced with an array of other nonvolatilememory elements, such as metal switches, blown capacitor devices,transistors with blown gate-oxide, NAND memory cells, PCM cells,magnetic memory cells. The fuse array 180 may store various operationalinformation for the memory device 100 by programming one or more fusestherein, such as trim setting conditions including specific timingand/or voltage parameters, read/write clock conditions based on theread/write timing outcomes, control bits to enable or disable customerspecific features or functionality, redundancy implementationinformation used for repairing a portion of the memory array 150, amongothers. In some cases, the fuses in the fuse array 180 may exhibit ahigh-resistance state (e.g., logic 0) upon fabricating the memory device100—e.g., via an oxide layer disposed between two conductive layers. Oneor more fuses in the fuse array 180 may be programmed to exhibit alow-resistance state (e.g., logic 1) when a fuse programming voltage (orcurrent) is applied across the one or more fuses—e.g., by physicallyaltering (rupturing) the oxide layer by means of electrical stress suchthat the two conductive layers are connected via a conductive path. Assuch, once the fuses are programmed (e.g., the oxide layer is rupturedto exhibit a low-resistance state, logic 1), the programmed fuses maynot be un-programmed (e.g., restoring their original high-resistancestate, logic 0). In some cases, such fuses may be referred to asanti-fuses.

Moreover, the fuse programming voltage (or current) may correspond to agreater voltage (or current) than an operational voltage (or current) ofcircuits in the memory device 100 (e.g., the command/address inputcircuit 105, the address decoder 110, the command decoder 115) when theoxide layer included in the fuses may be the same oxide layer includedin the circuits—e.g., a gate oxide of metal-oxide-semiconductor (MOS)transistors used to build the circuits. Accordingly, if the fuseprogramming voltage were supplied to the circuits, the fuse programmingvoltage may render the circuits irreparably damaged (e.g., the gateoxide of the MOS transistors may be damaged)—hence, the memory device100 may become nonfunctional, in some cases. Accordingly, access to theTM control circuit 175 including the fuse programming capability needsto be strictly controlled to avoid undesired or nefarious programming ofthe fuse array 180 and/or unintended activation of the fuse programmingvoltage (or current). As described in greater details herein, the memorydevice 100 may be configured to include various schemes to providesecure access keys to the TM control circuit 175 (or other securefeatures) and/or to the fuse array 180.

The command and address terminals may be supplied with command signalsCMD, address signals ADDR, and chip selection signals CS, from a memorycontroller. The command signals may represent various memory commandsfrom the memory controller (e.g., including access commands, which caninclude read commands and write commands). The select signal CS may beused to select the memory device 100 to respond to commands andaddresses provided to the command and address terminals. When an activeCS signal is provided to the memory device 100, the commands andaddresses can be decoded and memory operations can be performed. Thecommand signals CMD may be provided as internal command signals ICMD tothe command decoder 115 via the command/address input circuit 105. Thecommand decoder 115 may include circuits to decode the internal commandsignals ICMD to generate various internal signals and commands forperforming memory operations, for example, a row command signal toselect a word line and a column command signal to select a bit line. Theinternal command signals can also include output and input activationcommands, such as clocked command CMDCK.

The command decoder 115 may further include one or more registers 118for tracking various counts or values (e.g., counts of refresh commandsreceived by the memory device 100 or self-refresh operations performedby the memory device 100). In some embodiments, a subset of registers118 may be referred to as mode registers and configured to storeoperational parameters to provide flexibility in performing variousfunctions, features, and modes—e.g., test mode functions.

When a read command is issued and a row address and a column address aretimely supplied with the read command, read data can be read from memorycells in the memory array 150 designated by these row address and columnaddress. The read command may be received by the command decoder 115,which can provide internal commands to input/output circuit 160 so thatread data can be output from the data terminals DQ, RDQS, DBI, and DMIvia read/write amplifiers 155 and the input/output circuit 160 accordingto the RDQS clock signals. The read data may be provided at a timedefined by read latency information RL that can be programmed in thememory device 100, for example, in a mode register (not shown in FIG.1). The read latency information RL can be defined in terms of clockcycles of the CK clock signal. For example, the read latency informationRL can be a number of clock cycles of the CK signal after the readcommand is received by the memory device 100 when the associated readdata is provided.

When a write command is issued and a row address and a column addressare timely supplied with the command, write data can be supplied to thedata terminals DQ, DBI, and DMI according to the WCK and WCKF clocksignals. The write command may be received by the command decoder 115,which can provide internal commands to the input/output circuit 160 sothat the write data can be received by data receivers in theinput/output circuit 160, and supplied via the input/output circuit 160and the read/write amplifiers 155 to the memory array 150. The writedata may be written in the memory cell designated by the row address andthe column address. The write data may be provided to the data terminalsat a time that is defined by write latency WL information. The writelatency WL information can be programmed in the memory device 100, forexample, in the mode register (not shown in FIG. 1). The write latencyWL information can be defined in terms of clock cycles of the CK clocksignal. For example, the write latency information WL can be a number ofclock cycles of the CK signal after the write command is received by thememory device 100 when the associated write data is received.

The power supply terminals may be supplied with power supply potentialsVDD and VSS. These power supply potentials VDD and VSS can be suppliedto an internal voltage generator circuit 170. The internal voltagegenerator circuit 170 can generate various internal potentials VPP, VOD,VARY, VPERI, VPOP, and the like based on the power supply potentials VDDand VSS. The internal potential VPP can be used in the row decoder 140,the internal potentials VOD and VARY can be used in the sense amplifiersincluded in the memory array 150, and the internal potential VPERI canbe used in many other circuit blocks. In some embodiments, the internalpotential VPOP may be utilized as a fuse programming voltage that may besupplied to the fuse array 180.

The power supply terminal may also be supplied with power supplypotential VDDQ. The power supply potential VDDQ can be supplied to theinput/output circuit 160 together with the power supply potential VSS.The power supply potential VDDQ can be the same potential as the powersupply potential VDD in an embodiment of the present technology. Thepower supply potential VDDQ can be a different potential from the powersupply potential VDD in another embodiment of the present technology.However, the dedicated power supply potential VDDQ can be used for theinput/output circuit 160 so that power supply noise generated by theinput/output circuit 160 does not propagate to the other circuit blocks.

The clock terminals and data clock terminals may be supplied withexternal clock signals and complementary external clock signals. Theexternal clock signals CK, CKF, WCK, WCKF can be supplied to a clockinput circuit 120. The CK and CKF signals can be complementary, and theWCK and WCKF signals can also be complementary. Complementary clocksignals can have opposite clock levels and transition between theopposite clock levels at the same time. For example, when a clock signalis at a low clock level a complementary clock signal is at a high level,and when the clock signal is at a high clock level the complementaryclock signal is at a low clock level. Moreover, when the clock signaltransitions from the low clock level to the high clock level thecomplementary clock signal transitions from the high clock level to thelow clock level, and when the clock signal transitions from the highclock level to the low clock level the complementary clock signaltransitions from the low clock level to the high clock level.

Input buffers included in the clock input circuit 120 can receive theexternal clock signals. For example, when enabled by a CKE signal fromthe command decoder 115, an input buffer can receive the CK and CKFsignals and the WCK and WCKF signals. The clock input circuit 120 canreceive the external clock signals to generate internal clock signalsICLK. The internal clock signals ICLK can be supplied to an internalclock circuit 130. The internal clock circuit 130 can provide variousphase and frequency controlled internal clock signal based on thereceived internal clock signals ICLK and a clock enable signal CKE fromthe command/address input circuit 105. For example, the internal clockcircuit 130 can include a clock path (not shown in FIG. 1) that receivesthe internal clock signal ICLK and provides various clock signals to thecommand decoder 115. The internal clock circuit 130 can further provideinput/output (IO) clock signals. The IO clock signals can be supplied tothe input/output circuit 160 and can be used as a timing signal fordetermining an output timing of read data and the input timing of writedata. The IO clock signals can be provided at multiple clock frequenciesso that data can be output from and input to the memory device 100 atdifferent data rates. A higher clock frequency may be desirable whenhigh memory speed is desired. A lower clock frequency may be desirablewhen lower power consumption is desired. The internal clock signals ICLKcan also be supplied to a timing generator 135 and thus various internalclock signals can be generated.

The memory device 100 can be connected to any one of a number ofelectronic devices capable of utilizing memory for the temporary orpersistent storage of information, or a component thereof. For example,a host device of memory device 100 may be a computing device such as adesktop or portable computer, a server, a hand-held device (e.g., amobile phone, a tablet, a digital reader, a digital media player), orsome component thereof (e.g., a central processing unit, a co-processor,a dedicated memory controller, etc.). The host device may be anetworking device (e.g., a switch, a router, etc.) or a recorder ofdigital images, audio and/or video, a vehicle, an appliance, a toy, orany one of a number of other products. In one embodiment, the hostdevice may be connected directly to memory device 100, although in otherembodiments, the host device may be indirectly connected to memorydevice (e.g., over a networked connection or through intermediarydevices).

In some cases, a memory device (e.g., the memory device 100) may includea fuse array configured to store a first access key (e.g., auser-defined access key), circuitry configured to generate controlsignals in response to receiving an access command directed to the fusearray, where the access command includes a second access key. The memorydevice may also include a component coupling the circuitry with the fusearray, where the component is configured to retrieve the first accesskey from the fuse array, compare the first access key with the secondaccess key, and determine whether to permit or prohibit execution of theaccess command at the fuse array based on comparing the first access keywith the second access key.

In some cases, a memory device (e.g., the memory device 100) may includea fuse array configured to store a first access key (e.g., an FID-basedaccess key) at a predetermined set of addresses thereof, where the firstaccess key is based on manufacturing information that identifies thememory device (e.g., a unique identifier of the memory device). Thememory device may also include peripheral circuitry coupled to the fusearray and a memory device, and configured to generate an access commandin response to receiving an access request directed to the fuse array,from a host device, where the access request includes a second accesskey. Additionally, the peripheral circuitry may be configured toretrieve the first access key from the fuse array, compare the firstaccess key with the second access key, and determine whether to permitor prohibit execution of the access command at the fuse array based oncomparing the first access key with the second access key.

In some cases, a memory device (e.g., the memory device 100) may includea set of nonvolatile memory elements configured to store a first accesskey (e.g., a secret access key). The set of nonvolatile memory elementsmay include one or more fuses of a fuse array, one or more conductivelayers, or both. In some cases, the set of nonvolatile memory elementsmay include metal switches, blown capacitor devices, transistors withblown gate-oxide, NAND memory cells, PCM cells, magnetic memory cells.The memory device may further include peripheral circuitry coupled tothe set of nonvolatile memory elements and a memory array, andconfigured to receive a predetermined sequence of signals from a hostdevice, retrieve the first access key from the set of nonvolatile memoryelements in response to receiving the predetermined sequence of signals,configure one or more pins to output the first access key, and transmitthe first access key using the one or more pins after configuring theone or more pins.

FIG. 2 is a block diagram 200 schematically illustrating an examplesecure access flow (e.g., an example secure feature access) for a memorydevice in accordance with an embodiment of the present technology. Theblock diagram 200 includes aspects of an operational sequence associatedwith providing various levels of security in carrying out test modefunctions of the memory device 100 described with reference to FIG. 1.As described herein, the test mode functions may include a trim settingfunction (box 215 a)—e.g., latching trim conditions without programingfuses, a fuse access function (box 215 b), among others. Each box in theblock diagram 200 may include aspects of one or more components orcircuits described herein with reference to FIGS. 1 and 3 through 7.Such components or circuits may carry out various operations and/orfunctions designated to each box by performing one or more algorithms orroutines. First, an overall synopsis of the operational sequence isdescribed without referring to authentication components/steps indicatedas boxes 250.

At box 205, a memory device (e.g., the memory device 100 described withreference to FIG. 1) may receive, from a host device, a command directedto test mode functions—e.g., via the address/command input circuit 105.The memory device (e.g., the address/command input circuit 105) maydetermine that the command is directed to the test mode functions andrelay the command to the TM control circuit 175.

At box 210, the TM control circuit 175 may determine that the command isdirected to perform a specific test mode function out of various testmode functions. For example, the TM control circuit 175 may determinethat the command is directed to the fuse access function. Accordingly,the TM control circuit 175 may activate circuitry (e.g., the fusecontrol component 510 described with reference to FIGS. 5 and 6)configured to control fuse access function.

At box 215 b, the circuitry (e.g., the fuse control component 510) maydetermine whether the command directed to the fuse access function is aread command or a write command. Subsequently, the circuitry maygenerate control signals including one or more addresses of fuses of thefuse array 180, a read command associated with the one or moreaddresses, or a write command associated with the one or more addresses.

When the command corresponds to a write command, at box 220, thecircuitry may activate (e.g., enable) a fuse programming component(e.g., the fuse programming voltage source 530) such that a fuseprogramming voltage (or current) becomes available to program one ormore fuses of the fuse array 180. Further, at box 222, the circuitry mayidentify the one or more fuses by providing the one or more addresses ofthe fuses to the fuse array 180. At box 224, the circuitry may program(e.g., write) the one or more identified fuses of the fuse array 180 byapplying the fuse programming voltage—e.g., electrically stress the fuseto exhibit a low-resistance once programmed. Subsequently, at box 240,the circuitry may exit (or terminate) the fuse access function afterprogramming the one or more fuses.

Similarly, when the command is a read command, at box 232, the circuitrymay identify the one or more fuses to be read by providing the one ormore addresses of the fuses of the fuse array 180. At box 234, thecircuitry may read the one or more identified fuses of the fuse array180. Subsequently, at box 240, the circuitry may exit (or terminate) thefuse access function after reading the one or more fuses.

The block diagram 200 illustrates one or more authenticationsteps/components indicated as boxes 250 in the operational sequence toprovide various levels of security in accessing test mode functions(e.g., the fuse access function). In this regard, the memory device maybe configured to store a first access key in nonvolatile memory elementsof the memory device. In some embodiments, a customer may determine andstore the first access key in the fuse array 180 (e.g., the user-definedaccess key). In some embodiments, a manufacturer of the memory devicemay store the first access key at a predetermined set of addresses ofthe fuse array 180, where the first access key is determined based onmanufacturing information that identifies the memory device 100 (e.g.,the FID-based access key). In some embodiments, the manufacturer of thememory device defines the first access key hidden from a third party(e.g., the secret access key) and stored at a set of nonvolatile memoryelements of the memory device 100 (e.g., a set of fuses, a set ofconductive layers). Such hidden access key may be available via one ormore pins of the memory device, which are designated for otherwisereceiving inputs only.

Further, the command received from the host device (box 205) may includea second access key, in some cases. The authentication steps/componentsat one or more boxes 250 may retrieve the first access key stored withinthe memory device (e.g., the fuse array 180, one or more conductivelayers of the memory device 100) and compare the first access key andthe second access key included in the command. Thereafter, theauthentication steps/components may determine whether to permit orprohibit further execution of the command based on the comparison.

In some embodiments, at box 250 a, the memory device 100 may perform theauthentication step in response to receiving the command directed to thetest mode functions. When the first access key does not match the secondaccess key, the command may be prohibited to reach the TM controlcircuit 175 that determines which specific test mode function that thecommand is directed to (box 210). Accordingly, an access to the testmode functions may be blocked at the outset when the command does notinclude the second access key matching the first access key.

In some embodiments, at box 250 b, the memory device 100 may perform theauthentication step after determining that the command is directed tothe fuse access function. When the second access key included in thecommand does not match the first access key, the command may be blockedfrom reaching the circuitry configured to control fuse access functions(e.g., the fuse control component 510). Accordingly, the circuitryconfigured to control the fuse access functions may not be activated.

In some embodiments, at box 250 c, the memory device 100 may perform theauthentication step after activating the circuitry (e.g., the fusecontrol component 510). When activated, the circuitry may generatecontrol signals directed to the fuse array 180, such as one or moreaddresses of fuses of the fuse array, a read command associated with theone or more addresses, a write command associated with the one or moreaddresses, or a combination thereof. When the second access key includedin the command does not match the first access key, the control signalsmay be blocked from reaching the fuse array 180, hence blocking the fuseaccess function from reaching the fuse array 180.

In some embodiments, at box 250 d, the memory device 100 may perform theauthentication step after determining that the fuse access function isdirected to writing information at the fuse array. When the secondaccess key included in the command does not match the first access key,the fuse program voltage component may be disabled (not activated) toprovide a fuse programming voltage to the fuse array (box 220).Accordingly, a write command may be blocked at the fuse array—e.g.,fuses may not be programmed without the fuse programming voltageavailable to the fuse array 180. Further, when the memory device 100performs authentication step at box 250 d, a read command directed tothe fuse array 180 may be performed without any authentication if thereare no other authentication steps implemented—e.g., at box 250 a, at box250 b, at box 250 c.

FIG. 3a shows a flow chart 301 illustrating a method of establishing anaccess key and a security mode for a memory device and FIG. 3b shows aschematic configuration 302 illustrating the access key and the securitymode in accordance with embodiments of the present technology. The flowchart 301 illustrates an example procedure for a customer to establish auser-defined access key—e.g., customers selected by the vendor,customers who pay for this secure feature access. The schematicconfiguration 302 illustrates security information that the customer maydefine, such as a user-defined access key 335 and a security mode 330associated with the user-defined access key 335. The flow chart 301 andthe schematic configuration 302 may include aspects of the secure accessflow depicted in the block diagram 200 that provides various levels ofsecurity for carrying out test mode functions of the memory device 100described with reference to FIGS. 1 and 2.

In some cases, the customer may define and store the securityinformation in a fuse array of a memory device (e.g., the fuse array 180described with reference to FIG. 1) using a special programming mode(e.g., the PPR mode) that allows the customer to program a portion ofthe fuse array without directly executing the fuse access function. Insome embodiments, such a portion may be limited to a few specificlocations of the fuse array (e.g., one or more specific addresses offuses in the fuse array, which may be communicated to the customer in adatasheet table, in some cases). In some cases, such a specialprogramming mode may be referred to as a customer programming mode. Forexample, under the customer programming mode, the customer may select aset of fuses in the fuse array to store the security information (e.g.,providing one or more addresses of fuses in the fuse array to identifywhich fuses to program, in some cases). Subsequently, a state machine(e.g., the control circuitry 706) of the memory device 100, on behalf ofthe customer, may carry out programming of the set of fuses inconjunction with other circuitry controlling the fuse array (e.g., theTM control circuit 175, the fuse control component 510) without thecustomer directly invoking the fuse access function.

The flow chart 301 illustrates the customer determining the securityinformation including a security mode 330 and a user-defined access key335 (box 310). Also, the customer may select a set of fuses of the fusearray 180 to store the security information using the PPR mode or thecustomer programming mode. Thereafter, the customer may enable thecustomer programming mode and provide the security information to thememory device 100 (box 315). Subsequently, the memory device 100, onbehalf of the customer, may utilize the fuse access function to storethe security information (e.g., the security mode 330 and theuser-defined access key 335) at the selected set of fuses of the fusearray 180 (box 320). In some cases, the customer may provide locationsof the set of fuses available for the customer to program based on adatasheet table listing one or more specific addresses of fuses in thefuse array.

The user-defined access key 335 may include any number of bits (e.g.,k-bits) that the customer may desire, within the storage space of thefuse array (or other nonvolatile memory elements) available to thecustomer. For example, the user-defined access key 335 may include64-bits, 128-bits, 256-bits, or more. In general, there may be atrade-off between a strength of security (e.g., a greater number of bitsin the user-defined access key 335, the stronger protection against anunauthorized access) and an efficiency of the memory device 100 (e.g.,storing and retrieving the user-defined access key 335, comparing theuser-defined access key 335 with another access key included in anaccess command) in determining the number of bits of the user-definedaccess key 335.

The security mode 330 may designate at which level the memory device 100may trigger the user-defined access key 335 to permit or prohibit acommand directed to the fuse access function (or other secure featuresaccesses) from reaching a next stage. For example, Table 1 illustratesvarious levels of security using two (2) bits of security mode 330.

TABLE 1 Security Mode Level of security selected 00 Unlocked: accesssecurity not implemented 01 Lock fuse read only 10 Lock fuse write only11 Lock fuse access (both read and write)

For example, when the security mode 330 corresponds to “10,” accessingthe fuse array may be blocked when the access command is a writecommand. That is, when the customer programs the security mode 330 tohave “10,” the memory device 100 implements the authentication step atbox 250 d as described with reference to FIG. 2. As such, when thesecurity mode 330 corresponds to “10,” a fuse programming component(e.g., the fuse programming voltage source 530) coupled to the fusearray and configured to generate a fuse programming voltage may bedisabled to block the write command (e.g., box 220 described withreference to FIG. 2).

Similarly, when the security mode 330 corresponds to “11,” accessing thefuse array may be blocked regardless of the access command being a writecommand or a read command. That is, the security mode 330 of “11” maycorrespond to the memory device 100 implementing the authentication stepat box 250 c (or the authentication step at box 250 b) as described withreference to FIG. 2. Table 1 depicts the security mode including 2-bitsfor illustration purposes, but the present disclosure is not limitedthereto. For example, the security mode 330 may include 3 bits, 4 bits,or even more to designate various levels where the security feature(e.g., the authentication step) may be implemented.

In some cases, a single user-defined access key 335 having k-bits may becommon to different security modes. For example, the single user-definedaccess key 335 may be used to prohibit the access command at theauthentication step at box 250 c (when the security mode 330 correspondsto “11”) or at the authentication step at box 250 d (when the securitymode 330 corresponds to “10”). In some cases, different access keys maybe assigned to different security modes, respectively. For example, auser-defined access key 335 (e.g., “101 . . . 10”) may be used toprohibit the access command at the authentication step at box 250 c(when the security mode 330 corresponds to “11”), and a differentuser-defined access key 335 (e.g., “111 . . . 00”) may be used toprohibit the access command at the authentication step at box 250 d(when the security mode 330 corresponds to “10”). In some cases,different user-defined access keys 335 may have different quantities ofbits.

FIG. 4a shows a flow chart 401 illustrating a method of using anoptional access key and a status indicator for a memory device and FIG.4b shows a schematic configuration 402 that includes the optional accesskey 435 and the status indicator 430 for the optional access key 435.The flow chart 401 illustrates an example procedure utilizing theoptional access key in addition to an access key (e.g., the user-definedaccess key) to facilitate additional security features. The flow chart401 and the schematic configuration 402 may include aspects of thesecure access flow depicted in the block diagram 200 that providesvarious levels of security for carrying out test mode functions of thememory device 100 described with reference to FIGS. 1 and 2.

In some cases, a manufacturer of the memory device 100 may define andstore the optional access key 435 in the fuse array (or nonvolatilememory elements). The optional access key 435 may be established priorto shipping the memory device 100 to a customer. As such, the memorydevice may include the optional access key 435 in addition to theuser-defined access key 335 defined by the customer as described withreference to FIG. 3. The status indicator 430 may indicate whether theoptional access key 435 is enabled or disabled based on varioussituations associated with the memory device 100. For example, when thememory device 100 is shipped to the customer, the status indicator 430may be set to indicate that the optional access key 435 isdisabled—e.g., the optional access key 435 defined by the manufactureris not allowed to override the user-defined access key 335 defined bythe customer.

In some cases, the customer may ship the memory device 100 back to themanufacturer after having stored the user-defined access key 335 suchthat the manufacture may perform certain analytical tasks that requireaccesses to the fuse array (or the nonvolatile memory elements). In somecases, such an analytical task that the manufacturer performs may bereferred to as a return-material-analyses (RMA) procedure. Further, thecustomer may not desire to share the user-defined access key 335 withthe manufacturer. In such cases, the customer may program (alter ormodify) the status indicator 430 to indicate that the optional accesskey 435 is enabled (box 410)—e.g., the optional access key 435 definedby the manufacture overrides the user-defined access key 335 defined bythe customer. The manufacturer may provide the optional access key 435from the fuse array (box 415) and override the user-defined access key335 to carry out various RMA tasks utilizing information stored withinthe fuse array. When the customer receives the memory device 100 fromthe manufacturer after the RMA tasks, the customer may program thestatus indicator 430 to indicate that the optional access key 435 isdisabled (box 420) such that access to the fuse array may be allowedonly by using the user-defined access key 335 defined by the customer.

The status indicator 430 may be configured to indicate whether theoptional access key 435 is disabled or enabled. For example, Table 2illustrates various indications using three (3) bits (e.g., b₂ b₁ b₀) ofthe status indicator 430.

TABLE 2 Status (b₂ b₁ b₀) Description x00 Optional access key disabledx01 Optional access key enabled x10 Optional access key enabled x11Optional access key disabled 1xx Optional access key permanentlydisabled

Table 2 illustrates that two right-most bits (b₁b₀) of the statusindicator 430 may indicate whether the optional access key 435 isenabled or disabled. For example, when the memory device 100 is shippedto the customer, b₁b₀ may correspond to “00” to indicate that theoptional access key 435 is disabled. When the memory device 100 isshipped back to the manufacture to perform the RMA procedure, one of thetwo right-most bits (b₁b₀) of the status indicator 430 may be altered to“1” from “0” such that b₁b₀ (e.g., either “10” or “01”) may indicatethat the optional access key 435 is enabled. In some cases, anexclusive-OR (XOR) function may be carried out using the two right-mostbits, b₁ and b₀, to determine whether the optional access key 435 isenabled or disabled. When the memory device 100 is shipped back to thecustomer after completing the RMA procedure, a remaining bit of the tworight-most bits (b₁ or b₀) of the status indicator 430 may be programedto “1” from “0” such that the two right-most bits (b₁b₀) correspond to“11” to indicate that the optional access key 435 is disabled.

Moreover, the most significant bit (b₂) of the status indicator 430 maybe set (programmed to “1”) to indicate that the optional access key 435is disabled permanently regardless of the logic state of the tworight-most bits (b₁ and b₀). For example, when the customer foresees noRMA procedure necessary in the future, the most significant bit (b₂) ofthe status indicator 430 may be set (e.g., programmed) to “1.” Table 2depicts the status indicator 430 including 3-bits for illustrationpurposes, but the present disclosure is not limited thereto. Forexample, the status indicator 430 may include 4 bits, 5 bits, or evenmore. Additionally, the bit indicating the optional access key 435 ispermanently disabled may be any bit or bits of the status indicator 430.

FIG. 5 is a block diagram 500 schematically illustrating a circuitconfiguration of a memory device in accordance with an embodiment of thepresent technology. The block diagram 500 may include aspects ofcircuits and components of the memory device 100 that are associatedwith test mode functions and the fuse array described with reference toFIG. 1. The block diagram 500 includes a fuse control component 510(which may be an example of or include aspects of the TM control circuit175), a fuse array 520 (which may be an example of or include aspects ofthe fuse array 180), and a fuse programming voltage source 530 (whichmay be an example of or include aspects of the internal potential VPERIor VPOP described with reference to FIG. 1). Also, the block diagram 500illustrates one or more authentication components 560 (e.g., anauthentication component 560 a along a channel 550 a, an authenticationcomponent 560 b along a channel 550 b) that may be configured todetermine whether to permit or prohibit access commands to the fusearray 520. In some embodiments, the fuse control component 510, the fuseprogramming voltage source 530, authentication components 560, or anycombination thereof may be collectively referred to as peripheralcircuitry. Further, the peripheral circuit may be coupled to a memoryarray (e.g., the memory array 150) of the memory device.

The fuse array 520 may be configured to store an access key 540 (e.g., afirst access key). In some cases, the access key 540 may be an exampleof or include aspects of an access key defined and stored by thecustomer (e.g., the user-defined access key 335 described with referenceto FIG. 3). As such, the access key 540 may be associated with asecurity mode (e.g., the security mode 330 as described with referenceto FIG. 3). In some cases, the access key 540 may be an example of orinclude aspects of an access key defined and stored by the manufacturer(e.g., the secret access key configured to be transmitted using one ormore pins that are designated for otherwise only receiving signals). Insome cases, at least a portion of the access key 540 may be stored atone or more conductive layers of the memory device instead of at thefuse array 520. Moreover, the block diagram 500 illustrates an optionalaccess key 545, which may be an example of or include aspects of theoptional access key 435 described with reference to FIG. 4. As such, theoptional access key 545 may be associated with the status indicator 430described with reference to FIG. 4. In some cases, at least a portion ofthe optional access key 545 may be stored at one or more conductivelayers of the memory device as illustrated in the block diagram 500. Insome cases, the optional access key 545 may be stored in the fuse array520 (or nonvolatile memory elements) or in another fuse array (notshown) of the memory device. In some cases, the optional access key 545may be stored in a register (e.g., the register 118) of the memorydevice.

The fuse control component 510 may be configured to generate controlsignals for the fuse array 520 in response to receiving an accesscommand directed to the fuse array 520. The control signals may includeone or more addresses of fuses of the fuse array 520, a read commandassociated with the one or more addresses, a write command associatedwith the one or more addresses, or a combination thereof. The controlsignals may be transmitted to the fuse array 520 via a channel 550 a.The access command may include a second access key provided by ahost-device of a system that includes the memory device 100. Further,when a write command to the fuse array 520 is issued, the fuse controlcomponent 510 may be configured to generate control signals directed tothe fuse programming voltage source 530—e.g., an additionalfunctionality associated with the write command to enable the fuseprogramming voltage (e.g., VPOP described with reference to FIG. 1).Such control signals may be transmitted to the fuse programming voltagesource 530 via a channel 550 b.

In some cases (e.g., authenticating a read command directed to the fusearray 520), a component 560 a (“an authentication component 560 a”) maybe located between the fuse control component 510 and the fuse array520, and electrically couple the fuse control component 510 with thefuse array 520. The component 560 a may be configured to retrieve theaccess key 540 from the fuse array 520 to compare with the second keyincluded in the access command. Further, the component 560 a maydetermine whether to permit or prohibit execution of the access commandat the fuse array 520 based on comparing the access key 540 with thesecond access key. That is, when the second access key does not matchwith the access key 540, the component 560 a may block the controlsignals from reaching the fuse array 520.

In some cases (e.g., authenticating a write command directed to the fusearray 520), a component 560 b (“an authentication component 560 b”) maybe located between the fuse control component 510 and the fuseprogramming voltage source 530, and electrically couple the fuse controlcomponent 510 with the fuse programming voltage source 530. Similar tothe component 560 a, the component 560 b may be configured to retrievethe access key 540 from the fuse array 520 to compare with the secondkey included in the access command. Further, the component 560 b maydetermine whether to permit or prohibit execution of the access commandat the fuse array 520 based on comparing the access key 540 with thesecond access key. That is, when the second access key does not matchwith the access key 540, the component 560 b may prevent the fusecontrol component 510 from activating (e.g., enabling) the fuseprogramming voltage source 530 (or disable the fuse programming voltagesource 530) that is coupled with the fuse array. The fuse programmingvoltage source 530 may be configured to generate a fuse programmingvoltage. In some cases, the fuse programming voltage may be greater thanan operating voltage of the fuse control component 510 or the component560 a and/or 560 b. When the fuse programming voltage source 530 isdisabled (e.g., deactivated), the write command directed to the fusearray 520 is prevented at the fuse array 520 due to absence of a fuseprogramming voltage that is necessary to program fuses of the fuse array520.

In some cases, the access key 540 may be associated with a security mode(e.g., the security mode 330 described with reference to FIG. 3). Basedon the security mode 330, the memory device 100 (e.g., the TM controlcircuit 175, the fuse control component 510, the control circuitry 706)may determine at which level the security feature may be implemented.For example, when the security mode 330 corresponds to “11,” the memorydevice may block the control signals (e.g., read command, write command)from reaching the fuse array 520 by activating the authenticationcomponent 560 a located between the fuse control component 510 and thefuse array 520—e.g., the authentication step implemented at box 250 c asillustrated in FIG. 2. Additionally or alternatively, when the securitymode 330 corresponding to “10,” the memory device may prohibit the fusecontrol component 510 from activating (e.g., enabling) the fuseprogramming voltage source 530 (or keep the fuse programming voltagesource 530 disabled) by activating the authentication component 560 blocated between the fuse control component 510 and the fuse programmingvoltage source 530—e.g., the authentication step implemented at box 250d as illustrated in FIG. 2.

In some cases, the fuse control component 510 may be included in the TMcontrol circuit 175 that is configured to perform other test modefunctions different from the fuse access function—e.g., the trim settingfunction without programming fuses, special feature enabling function.When the second access key does not match with the access key 540, theTM control circuit 175 may be disabled from performing all the test modefunctions including the fuse access function—e.g., the authenticationstep implemented at box 250 a as illustrated in FIG. 2.

In some cases, the memory device 100 may include the optional access key545 in addition to the access key 540. In such cases, the authenticationcomponents 560 may be configured to retrieve the optional access key 545and update the access key 540 with the optional access key 545 beforecomparing the access key 540 with the second access key included in theaccess command. In some cases, updating the access key 540 with theoptional access key 545 may include replacing the access key 540 withthe optional access key 545. In other cases, updating the access key 540with the optional access key 545 may include concatenating the optionalaccess key 545 to the access key 540 as part of the access key 540.

FIG. 6 is a block diagram 600 schematically illustrating a circuitconfiguration of a memory device in accordance with an embodiment of thepresent technology. The block diagram 600 may include aspects ofcircuits and components of the memory device 100 that are associatedwith test mode functions and the fuse array described with reference toFIG. 1. Further, the block diagram 600 includes several componentsdescribed with reference to FIG. 5, such as the fuse control component510, the fuse array 520, and the fuse programming voltage source 530.The block diagram 600 illustrates one or more authentication components660 that may be positioned in various locations to control (e.g., permitor prohibit) accesses to the fuse array 520. In some embodiments, thefuse control component 510, the fuse programming voltage source 530,authentication components 660, or any combination thereof, may becollectively referred to as peripheral circuitry. Further, theperipheral circuitry may be coupled to a memory array (e.g., the memoryarray 150) of the memory device 100.

In some cases, the manufacturer of the memory device 100 may define anaccess key using a fuse identification (FID) that is unique to thememory device 100, hence an FID-based access key 640. The manufacturermay determine to utilize the FID-based access key 640 to implementsecurity features in lieu of providing a customer an option to define anaccess key as described with reference to FIG. 3. The FID may be uniqueto each individual memory device 100 because an FID includes metadatacomprising various manufacturing information associated with theindividual memory device 100, such as a product identification, a designrevision identification, a production site identification, a productionlot identification, a wafer identification within the production lot, adie location of the memory device within the wafer, or a combinationthereof. In some cases, an FID may be regarded as a uniqueidentification (or identifier) including a serial number comprisingapproximately sixty (60) to hundred (100) or more bits that identifieseach individual memory device 100 based on the manufacturinginformation.

The FID-based access key 640 may be the FID itself or a modified versionof the FID—e.g., encoded FID using a hash function, in some embodiments.The manufacturer may store the FID-based access key 640 at apredetermined set of addresses of the fuse array 520 to achieve a levelof obfuscation to protect the FID-based access key 640 from a thirdparty—e.g., partitioning the FID-based access key 640 to multipleportions that each correspond to individual addresses of thepredetermined set of addresses. Accordingly, encoding the FID-basedaccess key 640 may be carried out by partitioning the FID-based accesskey 640 to multiple portions that each correspond to individualaddresses of the predetermined set of addresses, modifying the FID-basedaccess key 640 using a hash function, or both. The predetermined set ofaddresses may be selected based on parameters associated with the memorydevice 100 such as a product identification, a design revisionidentification, a memory capacity, an operating voltage, a package type,an operating clock rate, an operating temperature range, or acombination thereof. As such, a first category of memory devices mayhave a first set of predetermined addresses to store FID-based accesskeys 640 and a second category of memory devices may have a second setof predetermined addresses to store FID-based access keys 640.

Thus, without prior knowledge of the predetermined set of addresseswithin the fuse array 520 associated with the memory device 100 and/orthe hash function used to encode the FID-based access key 640, theFID-based access key 640 is difficult for a third party to retrieve (anddecode) by random attempts. In some cases, the manufacturer may chooseto provide information regarding how to retrieve the FID-based accesskey 640 from the fuse array 520 to a customer of the memory device(e.g., the predetermined set of addresses, the hash function used toencode) such that the customer may have access (e.g., write command) tothe fuse array 520. In other cases, the manufacturer may choose not toprovide such information and limit the customer's access to the fusearray 520—e.g., restricting the customer to the PPR mode.

Under the scheme of using the FID-based access key 640, a read commandto the fuse array 520 may not be gated by an authentication component(e.g., an authentication component 660 d may be deactivated) at leastwhen a host device (e.g., the manufacturer of the memory device 100)needs to retrieve and decode the FID-based access key 640 from the fusearray 520 at the onset of the fuse access function. Once the FID-basedaccess key 640 is retrieved successfully, subsequent access commands(e.g., read command, write command) including the FID-based access key640 may be issued to the memory device 100 to execute the accesscommands directed to the fuse array 520.

Referring to the block diagram 600, when an access command directed tothe fuse array 520 corresponds to a read command directed to the fusearray 520, the fuse control component 510 may be configured to generatea first set of signals (e.g., one or more addresses of fuses of the fusearray 520, the read command associated with the one or more addresses)in response to receiving the access command. The first set of signalsmay be transmitted to the fuse array 520 via channel 650 that may bereferred to as a read path. As described above, no authentication (orgating) may be implemented on the read path 650, in some cases—e.g.,when the host device retrieves the FID-based access key 640 from thefuse array at the onset of the fuse access function. Once the hostdevice has retrieved the FID-based access key 640, subsequent readcommands may be gated (e.g., the authentication component 660 d isactivated). For example, a read command may include a second access keyand the authentication component 660 d may retrieve the FID-based accesskey 640 from the fuse array 520 to compare with the second access keyincluded in the read command. Further, the authentication component 660d may determine whether to permit or prohibit execution of the readcommand at the fuse array 520 based on comparing the FID-based accesskey 640 with the second access key.

When an access command directed to the fuse array 520 corresponds to awrite command directed to the fuse array 520, the fuse control component510 may be configured to generate a second set of signals (e.g., one ormore addresses of fuses of the fuse array 520, the write commandassociated with the one or more addresses) in response to receiving theaccess command. The second set of signals may be transmitted to the fusearray 520 via channel 655 a. The fuse control component 510 may transmitan additional signal to the fuse programming voltage source 530 viachannel 655 b. Channels 655 may be collectively referred to as a writepath. The write command may include a second access key provided by thehost device. The block diagram 600 also illustrates additionalauthentication components 660 disposed at various locations along thewrite path 655 (e.g., authentication component 660 a, authenticationcomponent 660 b, authentication component 660 c) to protect contents ofthe fuse array 520 from unauthenticated modifications.

The authentication components 660 a through 660 c may be configured toreceive the write command, as well as the second access key included inthe write command from the fuse control component 510. Theauthentication components 660 a through 660 c may retrieve the FID-basedaccess key 640 from the fuse array 520 in response to receiving thewrite command to compare the FID-based access key 640 and the secondaccess key. Further, the authentication components 660 a through 660 cmay determine whether to permit or prohibit execution of the writecommand at the fuse array 520 based on comparing the FID-based accesskey 640 with the second access key.

In some cases, the authentication component 660 a may be located at thewrite path (e.g., channel 655). When the second access key does notmatch the FID-based access key 640, the authentication component 660 amay nullify (e.g., block) the write command at the onset of the writepath. In some cases, the authentication component 660 b may be locatedbetween the fuse control component 510 and the fuse programming voltagesource 530, and electrically couple the fuse control component 510 withthe fuse programming voltage source 530. When the second access key doesnot match the FID-based access key 640, the authentication component 660b may prohibit the fuse control component 510 from activating (e.g.,enabling) the fuse programming voltage source 530 (or disable the fuseprogramming voltage source 530) that is coupled with the fuse array 520.In some cases, the authentication component 660 c may be located betweenthe fuse control component 510 and the fuse array 520, and electricallycouple the fuse control component 510 and the fuse array 520. When thesecond access key does not match the FID-based access key 640, theauthentication component 660 c may block the write command (e.g., thesecond set of signals associated with the write command via the channel655 a) from reaching the fuse array 520.

FIG. 7 is a block diagram schematically illustrating a memory system 701in accordance with an embodiment of the present technology. The memorysystem 701 includes a memory device 700, which may be an example of orinclude aspects of the memory device 100 described with reference toFIG. 1. As shown, the memory device 700 includes a main memory 702(e.g., DRAM, NAND flash, NOR flash, FeRAM, PCM, etc.) and controlcircuitry 706 operably coupled to a host device 708 (e.g., an upstreamcentral processing unit (CPU)). The main memory 702 may be an example ofor include aspects of the memory array 150 described with reference toFIG. 1. The control circuitry 706 include aspects of various componentsdescribed with reference to FIGS. 1 through 6. For example, the controlcircuitry 706 may include aspects of the command/address input circuit105, the TM control circuit 175, the fuse control component 510,authentication components 560, authentication components 660, amongothers. Further, the memory device 700 includes a fuse array 707 (or anarray of other types of nonvolatile memory elements), which may be anexample of or include aspects of the fuse array 180 described withreference to FIG. 1.

The main memory 702 includes a plurality of memory units 720, which eachinclude a plurality of memory cells. The memory units 720 can beindividual memory dies, memory planes in a single memory die, a stack ofmemory dies vertically connected with through-silicon vias (TSVs), orthe like. For example, in one embodiment, each of the memory units 720can be formed from a semiconductor die and arranged with other memoryunit dies in a single device package. In other embodiments, multiplememory units 720 can be co-located on a single die and/or distributedacross multiple device packages. The memory units 720 may, in someembodiments, also be sub-divided into memory regions 728 (e.g., banks,ranks, channels, blocks, pages, etc.).

The memory cells can include, for example, floating gate, charge trap,phase change, capacitive, ferroelectric, magnetoresistive, and/or othersuitable storage elements configured to store data persistently orsemi-persistently. The main memory 702 and/or the individual memoryunits 720 can also include other circuit components, such asmultiplexers, decoders, buffers, read/write drivers, address registers,data out/data in registers, etc., for accessing and/or programming(e.g., writing) the memory cells and other functions, such as forprocessing information and/or communicating with the control circuitry706 or the host device 708. Although shown in the illustratedembodiments with a certain number of memory cells, rows, columns,regions, and memory units for purposes of illustration, the number ofmemory cells, rows, columns, regions, and memory units can vary, andcan, in other embodiments, be larger or smaller in scale than shown inthe illustrated examples. For example, in some embodiments, the memorydevice 700 can include only one memory unit 720. Alternatively, thememory device 700 can include two, three, four, eight, ten, or more(e.g., 16, 32, 64, or more) memory units 720. Although the memory units720 are shown in FIG. 7 as including four memory regions 728 each, inother embodiments, each memory unit 720 can include one, two, three,eight, or more (e.g., 16, 32, 64, 100, 128, 256, or more) memoryregions.

In one embodiment, the control circuitry 706 can be provided on the samedie as the main memory 702 (e.g., including command/address/clock inputcircuitry, decoders, voltage and timing generators, input/outputcircuitry, etc.). In another embodiment, the control circuitry 706 canbe a microcontroller, special purpose logic circuitry (e.g., a fieldprogrammable gate array (FPGA), an application specific integratedcircuit (ASIC), control circuitry on a memory die, etc.), or othersuitable processor. In one embodiment, the control circuitry 706 caninclude a processor configured to execute instructions stored in memoryto perform various processes, logic flows, and routines for controllingoperation of the memory device 700, including managing the main memory702 and handling communications between the memory device 700 and thehost device 708. In some embodiments, the control circuitry 706 caninclude embedded memory with memory registers for storing, e.g., rowcounters, bank counters, memory pointers, fetched data, etc. In anotherembodiment of the present technology, a memory device 700 may notinclude control circuitry, and may instead rely upon external control(e.g., provided by the host device 708, or by a processor or controllerseparate from the memory device 700).

The host device 708 can be any one of a number of electronic devicescapable of utilizing memory for the temporary or persistent storage ofinformation, or a component thereof. For example, the host device 708may be a computing device such as a desktop or portable computer, aserver, a hand-held device (e.g., a mobile phone, a tablet, a digitalreader, a digital media player), or some component thereof (e.g., acentral processing unit, a co-processor, a dedicated memory controller,etc.). The host device 708 may be a networking device (e.g., a switch, arouter, etc.) or a recorder of digital images, audio and/or video, avehicle, an appliance, a toy, or any one of a number of other products.In one embodiment, the host device 708 may be connected directly tomemory device 700, although in other embodiments, the host device 708may be indirectly connected to memory device (e.g., over a networkedconnection or through intermediary devices).

In operation, the control circuitry 706 can directly write or otherwiseprogram (e.g., erase) the various memory regions of the main memory 702.The control circuitry 706 communicates with the host device 708 over ahost-device bus or interface 710. In some embodiments, the host device708 and the control circuitry 706 can communicate over a dedicatedmemory bus (e.g., a DRAM bus). In other embodiments, the host device 708and the control circuitry 706 can communicate over a serial interface,such as a serial attached SCSI (SAS), a serial AT attachment (SATA)interface, a peripheral component interconnect express (PCIe), or othersuitable interface (e.g., a parallel interface). The host device 708 cansend various requests (in the form of, e.g., a packet or stream ofpackets) to the control circuitry 706. A request can include a commandto read, write, erase, return information, and/or to perform aparticular operation (e.g., a refresh operation, a TRIM operation, aprecharge operation, an activate operation, a wear-leveling operation, agarbage collection operation, etc.).

In some embodiments, the control circuitry 706 can be configured totrack operations (e.g., read operations, write operations, eraseoperations, activate operations, etc.) performed in the main memory 702(e.g., in a register or table in an embedded memory of the controlcircuitry 706) in multiple memory units 720 to facilitate performingrefresh operations on an as-needed basis. In this regard, the controlcircuitry 706 can be configured to compare the number or rate ofoperations experienced by different memory units 720 and to perform orschedule refresh operations on the memory units 720 based on acomparison between the number or rate of operations experienced by thememory units 720. Alternatively, the control circuitry 706 can beconfigured to perform or schedule refresh operations on the memory units720 based on a comparison of each memory unit 720 to one or morepredetermined thresholds (e.g., threshold numbers of operations,threshold rates of operations, etc.). Accordingly, a memory unit 720which is the target of operations that exceed a threshold number or ratecan be refreshed more frequently than another unit 720, due to thefreedom with which different units 720 can be subjected to out-of-orderrefresh operations.

In some cases, the memory device 700 may be configured to allow acustomer to determine and store a user-defined access key (e.g., a firstaccess key) in the fuse array 707 using a special programming mode—e.g.,the PPR mode. During operation of the memory system 701, the host device708 may generate and transmit an access command directed to the fusearray 707 to the memory device 700. The access command may include anaccess key (e.g., a second access key) provided by the host device 708.The memory device 700 (e.g., the control circuitry 706) may receive theaccess command directed to the fuse array 707 and retrieve theuser-defined access key from the fuse array 707. The memory device 700may compare the user-defined access key with the access key (e.g., thesecond access key) included in the access command. Further, the memorydevice 700 may determine whether to permit or prohibit execution of theaccess command at the fuse array 707 based on comparing the user-definedaccess key with the second access key.

In some cases, the memory device 700 may block control signals generatedin response to receiving the access command from reaching the fuse array707 based on the determination (e.g., when the second access key doesnot match the user-defined access key), where the control signalscomprise one or more addresses of fuses of the fuse array 707, a readcommand associated with the one or more addresses, a write commandassociated with the one or more addresses, or a combination thereof. Insome cases, when the second access key does not match the user-definedaccess key, the memory device 700 may disable a voltage source (e.g.,the fuse programming voltage source 530) coupled with the fuse array 707and configured to generate a fuse programming voltage. In some cases,the fuse programming voltage may be greater than an operating voltage ofthe memory device 700.

In some cases, the memory device 700 may be configured to store aFID-based access key at a predetermined set of addresses of a fuse array707. Also, the host device 708 (e.g., the manufacturer of the memorydevice 700, the customer informed of the predetermined set of address toread the FID-based access key) may retrieve the FID-based access keyfrom the fuse array 707 using the predetermined set of addresses.Subsequently, the host device 708 may generate and transmit an accesscommand (e.g., a write command) including a second access key (e.g., theFID-based access key if the host device is either the manufacturer orthe customer informed of the predetermined set of addresses) to thememory device 700. Further, the memory device 700 may determine whetherto permit or prohibit execution of an access command (e.g., a writecommand when the access command is directed to programming one or morefuses of the fuse array 707) directed to the fuse array 707 based oncomparing the FID-based access key with the second access key includedin the access command.

In some cases, the memory device 700 may be configured to encode theFID-based access key prior to storing the FID-based access key to thefuse array 707, where the host device 708 may be configured to decodethe FID-based access key after retrieving the encoded FID-based accesskey. In some cases, encoding the FID-based access key may includepartitioning the FID-based access key to multiple portions that eachcorrespond to individual addresses of the predetermined set ofaddresses, and where decoding the access key may include concatenatingthe multiple portions to restore the FID-based access key. In somecases, encoding the FID-based access key may include modifying theFID-based access key using a hash function, and where decoding theFID-based access key may include restoring the FID-based access keyusing an inverse of the hash function.

In some cases, the manufacturer of the memory device 700 may define asecret access key (e.g., an access key hidden from a third party or acustomer) and store the secret access key at a set of nonvolatile memoryelements of the memory device 700. The set of nonvolatile memoryelements may include one or more fuses of the fuse array 707, one ormore conductive layers (e.g., one or more metal interconnect layers) ofthe memory device 700, or both. Further, the manufacturer may configureone or more pins of the memory device 700 such that the memory device700 may transmit the secret access key to the host device 708 inresponse to receiving a predetermined sequence of signals from the hostdevice 708. The one or more pins are, however, designated for otherwiseonly receiving signals from the host device 708. In this manner, themanufacturer may achieve multiple levels of obfuscation to protect thesecret access key—i.e., using the predetermined sequence of signals andthe one or more pins designated for otherwise only receiving signals asdescribed in greater details herein.

First, the host device 708 must have prior knowledge of thepredetermined sequence of signals to transmit to the memory device 700via a first channel. In some cases, the predetermined sequence ofsignals may correspond to a predetermined sequence of two or morecommands directed to the memory device 700—e.g., three (3) read commandsfollowed by two (2) write commands having nothing in between. In somecases, the predetermined sequence of signals corresponds to apredetermined combination of two or more voltage (or current) levels asa function of time during a fixed duration. Only when the memory device700 receives the predetermine sequence of signals from the host device708, the memory device 700 is configured to retrieve and transmit thesecret access key back to the host device 708. In some cases, themanufacturer may choose to use different sequences of signals fordifferent product groups to which the memory device 700 belongs suchthat even when a sequence of signals for a certain product group isaccidentally revealed, a risk associated with revealing the sequence ofsignals may be confined to the product group.

Second, the host device 708 must have prior knowledge of which pin(s) tomonitor to receive the secret access key via a second channel aftertransmitting the predetermined sequence of signals to the memory device700 via the first channel. Because the memory device 700 configures thepin(s) designated as input only pin(s) for the memory device 700 totransmit (e.g., output) the secret access key to the host device 708, aboard configured to house the host device 708 and the memory device 700is required to enable the host device 708 to receive the secret accesskey from the memory device 700 using the pin(s). In this manner, themanufacturer may protect the secret access key from a third party thatmay not have prior knowledge of the predetermined sequence of signals totransmit to the memory device 700 and of the one or more pins to monitorto receive the secret access key from the memory device 700.

When the host device 708 successfully receives the secret access key,the host device 708 may generate an access command directed to the fusearray 707 of the memory device 700, where the access command includes asecond access key (e.g., the secret access key received from the memorydevice 700). Subsequently, the memory device 700 may retrieve the secretaccess key from the set of nonvolatile memory elements in response toreceiving the access command from the host device 708 and compare thesecond access key included in the access command with the secret accesskey. The memory device 700 may determine whether to permit or prohibitexecution of the access command at the fuse array based on comparing thesecret access key with the second access key included in the accesscommand as described herein with reference to FIGS. 1 through 5.

FIG. 8 is a flow chart 800 illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology. Theflow chart 800 may be an example of or include aspects of a method thatthe memory device 100 (or the control circuitry 706 of the memory device700) may perform as described with reference to FIGS. 1 through 5 and 7.

The method includes receiving an access command directed to a fuse arrayof a memory device, where the fuse array is configured to store a firstaccess key, and the access command includes a second access key (box810). In accordance with one aspect of the present technology, thereceiving feature of box 810 can be performed by a control circuitry(e.g., the control circuitry 706 of FIG. 7) or the command/address inputcircuit 105 as described with reference to FIGS. 1 through 5 and 7.

The method further includes retrieving the first access key from thefuse array after receiving the access command (box 815). In accordancewith one aspect of the present technology, the retrieving feature of box815 can be performed by the control circuitry (e.g., the controlcircuitry 706 of FIG. 7) or the authentication components 560 asdescribed with reference to FIGS. 1 through 5 and 7.

The method further includes comparing the first access key with thesecond access key (box 820). In accordance with one aspect of thepresent technology, the comparing feature of box 820 can be performed bythe control circuitry (e.g., the control circuitry 706 of FIG. 7) or theauthentication components 560 as described with reference to FIGS. 1through 5 and 7.

The method further includes determining whether to permit or prohibitexecution of the access command at the fuse array based on comparing thefirst access key with the second access key (box 825). In accordancewith one aspect of the present technology, the comparing feature of box825 can be performed by the control circuitry (e.g., the controlcircuitry 706 of FIG. 7) or the authentication components 560 asdescribed with reference to FIGS. 1 through 5 and 7.

The method can further include retrieving a third access key stored bythe memory device and updating the first access key with the thirdaccess key, where comparing the first access key with the second accesskey is based on updating the first access key (box 830). In accordancewith one aspect of the present technology, the retrieving and comparingfeature of box 830 can be performed by the control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) or the authentication components 560 asdescribed with reference to FIGS. 1 through 5 and 7.

In some embodiments, prohibiting the execution may include blockingcontrol signals generated in response to receiving the access commandfrom the fuse array based on the determination, where the controlsignals include one or more addresses of fuses of the fuse array, a readcommand associated with the one or more addresses, a write commandassociated with the one or more addresses, or a combination thereof. Insome embodiments, prohibiting the execution may include disabling avoltage source coupled with the fuse array, where the voltage source isconfigured to generate a fuse programming voltage. In some embodiments,the fuse programming voltage may be greater than an operating voltage ofthe memory device.

In some embodiments, prohibiting the execution may include determining,based on a security mode associated with the first access key, whetherto block control signals from the fuse array or to disable a voltagesource coupled with the fuse array, where the control signals aregenerated in response to receiving the access command. In someembodiments, prohibiting the execution may include disabling circuitryconfigured to perform test mode functions including generating controlsignals for the fuse array in response to receiving the access commanddirected to the fuse array.

FIG. 9 is a flow chart 900 illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology. Theflow chart 900 may be an example of or include aspects of a method thatthe memory device 100 (or the control circuitry 706 of the memory device700) may perform as described with reference to FIGS. 1 through 5 and 7.

The method includes receiving security information directed to a fusearray of a memory device, where the security information includes afirst portion for one or more access keys and a second portion for oneor more security modes, and where an individual access key of the one ormore access keys is configured to permit or prohibit execution of anaccess command directed to the fuse array, and an individual securitymode of the one or more security modes is configured to identify a modeof permitting or prohibiting the execution at the fuse array (box 910).In accordance with one aspect of the present technology, the receivingfeature of box 910 can be performed by a control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) as described with reference to FIGS. 1through 5 and 7.

The method further includes determining, in response to receiving thesecurity information, a first plurality of bits corresponding to the oneor more access keys and a second plurality of bits corresponding to theone or more security modes (box 915). In accordance with one aspect ofthe present technology, the determining feature of box 915 can beperformed by the control circuitry (e.g., the control circuitry 706 ofFIG. 7) as described with reference to FIGS. 1 through 5 and 7.

The method further includes generating one or more addresses of the fusearray, where the one or more addresses correspond to the first andsecond plurality of bits (box 920). In accordance with one aspect of thepresent technology, the generating feature of box 920 can be performedby the control circuitry (e.g., the control circuitry 706 of FIG. 7) orthe fuse control component 510 as described with reference to FIGS. 1through 5 and 7.

The method further includes storing the first and second plurality ofbits in the fuse array using the one or more addresses (box 925). Inaccordance with one aspect of the present technology, the generatingfeature of box 925 can be performed by the control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) or the fuse control component 510 asdescribed with reference to FIGS. 1 through 5 and 7.

In some embodiments, the one or more security modes may comprisedisabling a circuit configured to perform test mode functions includinggenerating control signals for the fuse array, blocking the controlsignals from the fuse array, or disabling a voltage source coupled withthe fuse array and configured to generate a fuse programming voltage. Insome embodiments, a particular mode of permitting or prohibiting theexecution at the fuse array may be determined based on a combination ofthe one or more access keys and the one or more security modes.

In some embodiments, the first portion may comprise an access key commonto the one or more security modes such that a particular mode ofpermitting or prohibiting the execution at the fuse array is determinedbased on the access key in conjunction with the one or more securitymodes. In some embodiments, the first portion may comprise two or moreaccess keys that are different from each other such that a particularmode of permitting or prohibiting the execution at the fuse array isdetermined based on the two or more access keys. In some embodiments,storing the first and second plurality of bits may comprise enabling avoltage source coupled with the fuse array and configured to generate afuse programming voltage that is greater than an operating voltage ofthe memory device.

FIG. 10 is a flow chart 1000 illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology. Theflow chart 1000 may be an example of or include aspects of a method thatthe memory device 100 (or the control circuitry 706 of the memory device700) may perform as described with reference to FIGS. 1 through 4, 6,and 7.

The method includes receiving, from a host device, an access requestdirected to a fuse array of a memory device, where the fuse arrayincludes a first access key at a predetermined set of addresses thereof,and where the access request includes a second access key (box 1010). Inaccordance with one aspect of the present technology, the receivingfeature of box 1010 can be performed by a control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) or the command/address input circuit105 as described with reference to as described with reference to FIGS.1 through 4, 6, and 7.

The method further includes generating an access command including thesecond access key in response to receiving the access request (box1015). In accordance with one aspect of the present technology, thegenerating feature of box 1015 can be performed by the control circuitry(e.g., the control circuitry 706 of FIG. 7) or the fuse controlcomponent 510 as described with reference to FIGS. 1 through 4, 6, and7.

The method further includes comparing the first access key with thesecond access key (box 1020). In accordance with one aspect of thepresent technology, the comparing feature of box 1020 can be performedby the control circuitry (e.g., the control circuitry 706 of FIG. 7) orthe authentication component 660 as described with reference to FIGS. 1through 4, 6, and 7.

The method further includes determining whether to permit or prohibitexecution of the access command at the fuse array based on comparing thefirst access key with the second access key (box 1025). In accordancewith one aspect of the present technology, the determining feature ofbox 1025 can be performed by the control circuitry (e.g., the controlcircuitry 706 of FIG. 7) or the authentication component 660 asdescribed with reference to FIGS. 1 through 4, 6, and 7.

The method can further include selecting the predetermined set ofaddresses to store the first access key based on parameters associatedwith the memory device (box 1030). In accordance with one aspect of thepresent technology, the selecting feature of box 1025 can be performedby the control circuitry (e.g., the control circuitry 706 of FIG. 7) asdescribed with reference to FIGS. 1 through 4, 6, and 7.

Additionally or alternatively, the method can further include encodingthe first access key prior to storing the first access key at thepredetermined set of addresses. In accordance with one aspect of thepresent technology, the encoding feature can be performed by the controlcircuitry (e.g., the control circuitry 706 of FIG. 7) as described withreference to FIGS. 1 through 4, 6, and 7.

In some embodiments, the first access key may be configured to identifythe memory device based on metadata for manufacturing information aboutthe memory device. In some embodiments, prohibiting the execution mayinclude nullifying the access command when the first access key isdifferent from the second access key. In some embodiments, prohibitingthe execution may include blocking the write command from reaching thefuse array when the first access key is different from the second accesskey. In some embodiments, prohibiting the execution may includedisabling a voltage source coupled with the fuse array and configured togenerate a fuse programming voltage when the first access key isdifferent from the second access key.

FIG. 11 is a flow chart 1100 illustrating a method of operating a memorydevice in accordance with an embodiment of the present technology. Theflow chart 1100 may be an example of or include aspects of a method thatthe memory device 100 (or the control circuitry 706 of the memory device700) may perform as described with reference to FIGS. 1 through 5 and 7.

The method includes receiving a predetermined sequence of signals from ahost device through a first set of pins of a memory device (box 1110).In accordance with one aspect of the present technology, the receivingfeature of box 1110 can be performed by a control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) or the command/address input circuit105 as described with reference to FIGS. 1 through 5 and 7.

The method further includes retrieving a first access key from aplurality of nonvolatile memory elements of the memory device inresponse to receiving the predetermined sequence of signals (box 1115).In accordance with one aspect of the present technology, the retrievingfeature of box 1115 can be performed by the control circuitry (e.g., thecontrol circuitry 706 of FIG. 7) as described with reference to FIGS. 1through 5 and 7.

The method further includes configuring a second set of pins of thememory device to output the first access key (box 1120). In accordancewith one aspect of the present technology, the configuring feature ofbox 1120 can be performed by the control circuitry (e.g., the controlcircuitry 706 of FIG. 7) as described with reference to FIGS. 1 through5 and 7.

The method further includes transmitting the retrieved first access keyto the host device using the second set of pins after configuring thesecond set of pins (box 1125). In accordance with one aspect of thepresent technology, the transmitting feature of box 1125 can beperformed by the control circuitry (e.g., the control circuitry 706 ofFIG. 7) in conjunction with the input/output circuit 160 as describedwith reference to FIGS. 1 through 5 and 7.

The method can further includes receiving an access command from thehost device, the access command directed to a fuse array of the memorydevice and including a second access key (box 1130). In accordance withone aspect of the present technology, the transmitting feature of box1130 can be performed by the control circuitry (e.g., the controlcircuitry 706 of FIG. 7) in conjunction with the command/address inputcircuit 105 as described with reference to FIGS. 1 through 5 and 7.

The method can further includes generating control signals for the fusearray in response to receiving the access command, where the controlsignals includes one or more addresses of fuses of the fuse array, aread command associated with the one or more addresses, a write commandassociated with the one or more addresses, or a combination thereof (box1135). In accordance with one aspect of the present technology, thegenerating feature of box 1135 can be performed by the control circuitry(e.g., the control circuitry 706 of FIG. 7) or the fuse controlcomponent 510 as described with reference to FIGS. 1 through 5 and 7.

Additionally or alternatively, the method can further include comparingthe first access key with the second access key to determine whether thesecond access key corresponds to the first access key and determiningwhether to permit or prohibit execution of the access command at thefuse array based on comparing the first access key with the secondaccess key. In some embodiments, the second set of pins are designatedfor otherwise receiving inputs only from the host device. In someembodiments, prohibiting the execution when the second access key isdifferent from the first access key may include blocking the controlsignals from reaching the fuse array, disabling a voltage source coupledwith the fuse array and configured to generate a fuse programmingvoltage, or disabling circuitry of the memory device configured toperform test mode functions different from generating the controlsignals for the fuse array.

It should be noted that the methods described above describe possibleimplementations, and that the operations and the steps may be rearrangedor otherwise modified and that other implementations are possible.Furthermore, embodiments from two or more of the methods may becombined.

Information and signals described herein may be represented using any ofa variety of different technologies and techniques. For example, data,instructions, commands, information, signals, bits, symbols, and chipsthat may be referenced throughout the above description may berepresented by voltages, currents, electromagnetic waves, magneticfields or particles, optical fields or particles, or any combinationthereof. Some drawings may illustrate signals as a single signal;however, it will be understood by a person of ordinary skill in the artthat the signal may represent a bus of signals, where the bus may have avariety of bit widths.

The devices discussed herein, including a memory device, may be formedon a semiconductor substrate or die, such as silicon, germanium,silicon-germanium alloy, gallium arsenide, gallium nitride, etc. In somecases, the substrate is a semiconductor wafer. In other cases, thesubstrate may be a silicon-on-insulator (SOI) substrate, such assilicon-on-glass (SOG) or silicon-on-sapphire (SOP), or epitaxial layersof semiconductor materials on another substrate. The conductivity of thesubstrate, or sub-regions of the substrate, may be controlled throughdoping using various chemical species including, but not limited to,phosphorous, boron, or arsenic. Doping may be performed during theinitial formation or growth of the substrate, by ion-implantation, or byany other doping means.

The functions described herein may be implemented in hardware, softwareexecuted by a processor, firmware, or any combination thereof. Otherexamples and implementations are within the scope of the disclosure andappended claims. Features implementing functions may also be physicallylocated at various positions, including being distributed such thatportions of functions are implemented at different physical locations.

As used herein, including in the claims, “or” as used in a list of items(for example, a list of items prefaced by a phrase such as “at least oneof” or “one or more of”) indicates an inclusive list such that, forexample, a list of at least one of A, B, or C means A or B or C or AB orAC or BC or ABC (i.e., A and B and C). Also, as used herein, the phrase“based on” shall not be construed as a reference to a closed set ofconditions. For example, an exemplary step that is described as “basedon condition A” may be based on both a condition A and a condition Bwithout departing from the scope of the present disclosure. In otherwords, as used herein, the phrase “based on” shall be construed in thesame manner as the phrase “based at least in part on.”

From the foregoing, it will be appreciated that specific embodiments ofthe invention have been described herein for purposes of illustration,but that various modifications may be made without deviating from thescope of the invention. Rather, in the foregoing description, numerousspecific details are discussed to provide a thorough and enablingdescription for embodiments of the present technology. One skilled inthe relevant art, however, will recognize that the disclosure can bepracticed without one or more of the specific details. In otherinstances, well-known structures or operations often associated withmemory systems and devices are not shown, or are not described indetail, to avoid obscuring other aspects of the technology. In general,it should be understood that various other devices, systems, and methodsin addition to those specific embodiments disclosed herein may be withinthe scope of the present technology.

1-20. (canceled)
 21. A memory device, comprising: a memory array; anonvolatile memory configured to store an access key; and peripheralcircuitry coupled to the nonvolatile memory and the memory array, andconfigured to: receive a signal from a host device; retrieve the accesskey from the nonvolatile memory in response to receiving the signal; andtransmit the access key to the host device using one or more pinsdesignated for otherwise receiving inputs only.
 22. The memory device ofclaim 21, wherein the peripheral circuitry is configured to activatedesign-for-test (DFT) functions of the memory device in response toreceiving one or more commands including the access key from the hostdevice.
 23. The memory device of claim 22, wherein the DFT functionsincludes at least one of: a command directed to the memory device thatis otherwise hidden from the host device; access to a register of thememory device that is otherwise inaccessible by the host device; a testmode operation of the memory device that is otherwise unavailable to thehost device; or access to the nonvolatile memory that is otherwiseinaccessible by the host device.
 24. The memory device of claim 22,wherein one or more circuits of the memory device configured to performthe DFT functions are coupled to a common internal potential of thememory device.
 25. The memory device of claim 21, wherein the signalcorresponds to a predetermined sequence of two or more commands directedto the memory device.
 26. The memory device of claim 21, wherein thesignal corresponds to a predetermined combination of two or more voltagelevels as a function of time.
 27. The memory device of claim 21, whereinat least one of the one or more pins for transmitting the access keycorresponds to an address pin of the memory device.
 28. The memorydevice of claim 21, wherein the nonvolatile memory includes at least oneof fuses, conductive layers of the memory device, not-AND (NAND) flashmemory cells, phase change memory (PCM) cells, or magnetic memory cells.29. A method, comprising: receiving, at a memory device, a signal from ahost device; retrieving an access key from a nonvolatile memory of thememory device in response to receiving the signal; and transmitting theaccess key to the host device using one or more pins designated forotherwise receiving inputs only.
 30. The method of claim 29, furthercomprising: activating design-for-test (DFT) functions of the memorydevice in response to receiving one or more commands including theaccess key from the host device.
 31. The method of claim 30, whereinactivating the DFT functions includes at least one of: enabling acommand directed to the memory device that is otherwise hidden from thehost device; accessing a register of the memory device that is otherwiseinaccessible by the host device; performing a test mode operation of thememory device that is otherwise unavailable to the host device; oraccessing the nonvolatile memory that is otherwise inaccessible by thehost device.
 32. The method of claim 30, wherein activating the DFTfunctions corresponds to activating a common internal potential of thememory device, the common internal potential being coupled to one ormore circuits of the memory device configured to perform the DFTfunctions.
 33. The method of claim 29, wherein the signal corresponds toa predetermined sequence of two or more commands directed to the memorydevice.
 34. The method of claim 29, wherein the signal corresponds to apredetermined combination of two or more voltage levels as a function oftime.
 35. The method of claim 29, wherein at least one of the one ormore pins for transmitting the access key corresponds to an address pinof the memory device.
 36. A system, comprising: a host device configuredto: transmit a signal to a memory device; and receive an access key fromthe memory device in response to transmitting the signal, wherein: thememory device is configured to: receive the signal from the host device;retrieve the access key from a nonvolatile memory of the memory devicein response to receiving the signal; and transmit the access key to thehost device using one or more pins designated for otherwise receivinginputs only.
 37. The system of claim 36, wherein the host device isconfigured to generate one or more commands directed to the memorydevice in response to receiving the access key, the one or more commandsincluding the access key, and wherein the memory device is configured toactivate design-for-test (DFT) functions of the memory device inresponse to receiving the one or more commands from the host device. 38.The system of claim 36, wherein the signal corresponds to apredetermined sequence of two or more commands directed to the memorydevice.
 39. The system of claim 36, wherein the signal corresponds to apredetermined combination of two or more voltage levels as a function oftime.
 40. The system of claim 36, wherein at least one of the one ormore pins for transmitting the access key corresponds to an address pinof the memory device.